dual igbt hvigbt module 150 amperes/4500 volts 1 QID4515004 preliminary outline drawing and circuit diagram description: powerex hvigbts feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clear - ance distance for many demanding applications like medium voltage drives and auxiliary traction applications. features: ? -40 t o 150c extended t emperature range ? 1 00% dynamic tested ? 1 00% partial discharge tested ? a dvanced mitsubishi r-series chip t echnology ? alumin um nitride (aln) ceramic substr ate for low thermal impedance ? c omplementary line-up in expanding curr ent ranges to mitsubishi hvigbt p ower modules ? c opper baseplate ? cr eepage and clearance meet iec 60077 -1 ? r ugged swsoa and rrsoa applications: ? high voltage power supplies ? medium v oltage drives ? mot or drives ? traction 2 1 3 4 8 7 6 5 3 2 1 8 7 6 n j (2typ) s nuts (3typ) h h v (4typ) m g (3typ) r (deep) eb k (3typ) l (2typ) p u (5typ) t (screwing depth - 3 typ) q 5 4 f f d a c dimensions inches millimeters a 5.51 140.0 b 2.87 73.0 c 1.50 38.0 d 4.880.01 124.00.25 e 2.240.01 57.00.25 f 1.18 30.0 g 0.43 11.0 h 1.07 27.15 j 0.20 5.0 k 1.65 42.0 dimensions inches millimeters l 0.690.01 17.50.25 m 0.38 9.75 n 0.20 5.0 p 0.22 5.5 q 1.04 26.5 r 0.16 4.0 s m5 metric m5 t 0.63 min. 16.0 min. u 0.11 x 0.02 2.8 x 0.5 v 0.28 dia. 7.0 dia. powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 absolute maximum ratings, t j = 25 c unless otherwise specifed ratings symbol QID4515004 units junction temperature t j -40 t o 150 c storage temperature t stg -40 t o 125 c collector-emitter voltage (v ge = 0v, t j = -40 to +125c) v ces 4500 v olts collector-emitter voltage (v ge = 0v, t j = -50c) v ces 4400 v olts gate-emitter voltage (v ce = 0v) v ges 20 v olts collector current, dc (t c = 82c) i c 1 50 amper es peak collector current (pulse) i cm 300* amperes diode forward current** i f 1 50 amper es diode forward surge current** (pulse) i fm 300* amperes i 2 t for diode (t = 10ms) i 2 t 1 0 ka 2 sec maximum collector dissipation (t c = 25c, igbt part, t j(max) 150c) p c 1 580 watts mounting torque, m5 terminal screws 35 in-lb mounting torque, m6 mounting screws 44 in-lb module weight (typical) 800 gr ams isolation voltage (charged part to baseplate, ac 60hz 1 min.) v iso 6.0 kv olts partial discharge q pd 10 pc (v1 = 3500 v rms , v2 = 2600 v rms , f = 60hz (acc. to iec 1287)) maximum short-circuit pulse width, t psc 10 s (v cc 3200v, v ge = 15v, t j = 125c) electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v 1.8 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 13.3ma, v ce = 10v 5.8 6.3 6.8 volts collector-emitter saturation voltage v ce(sat) i c = 150a, v ge = 15v, t j = 25c 3.8 v olts i c = 150a, v ge = 15v, t j = 125c 4.6 5.5 volts total gate charge q g v cc = 2800v, i c = 150a, v ge = 15v 1 .5 c emitter-collector voltage** v ec i e = 150a, v ge = 0v, t j = 25c 2.8 v olts i e = 150a, v ge = 0v, t j = 125c 3.2 3.8 volts * pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics od rhw anti-parallel, emitter-to-collector free-wheel diode (fwdi). QID4515004 dual igbt hvigbt module 150 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com preliminary 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
3 electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units input capacitance c ies 19 nf output capacitance c oes v ge = 0v, v ce = 10v, f = 100khz 1 .22 nf reverse transfer capacitance c res 0.55 nf turn-on delay time t d(on) v cc = 2800v, i c = 133a, 1 .00 s rise time t r v ge = 15v, r g(on) = 24.3?, 0.30 s turn-off delay time t d(off) r g(off) = 90?, l s = 150nh 3.6 s fall time t f inductive load 0.36 s turn-on switching energy e on t j = 125c, i c = 133a, v ge = 15v, 0.55 j/p turn-off switching energy e off r g(on) = 24.3?, r g(off) = 90?, 0.34 j/p v cc = 2800v, l s = 150nh , inductive load diode reverse recovery time** t rr v cc = 2800v, i e = 133a, 0.7 s diode reverse recovery charge** q rr v ge = 15v, r g(on) = 24.3?, 1 11* c diode reverse recovery energy e rec l s = 150nh, inductive load 1 72 mj/p stray inductance (c1-e2) l sce 60 nh lead resistance terminal-chip r ce 0.8 m? thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case*** r th(j-c) q per igbt 0.079 k/w thermal resistance, junction to case*** r th(j-c) d per fwdi 0.149 k/w contact thermal resistance, case to fin r th(c-f) per module, 0.0 18 k/w ther mal grease applied, grease = 1w/mk comparative tracking index cti 600 clearance distance in air (terminal to base) d a(t-b) 35.0 mm clearance distance in air d a(t-t) 19 mm (terminal to terminal) creepage distance along surface d s(t-t) 54 mm (terminal to terminal) *pulse width and repetition rate should be such that device junction temperature rise is negligible. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). ***t c measurement point is just under the chips. QID4515004 dual igbt hvigbt module 150 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com preliminary 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) emitter current, i e , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-current, i c , (amperes) collector-emitter saturation voltage characteristics (typical) v ce = v ge t j = 25c t j = 150c collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 2 4 86 0 v ge = 16v 11 15 13 10 t j = 25 c 55 110 165 220 275 0 55 110 165 220 275 0 2 4 86 0 55 110 165 220 275 0 4 8 16 12 0 55 110 165 220 275 gate-emitter voltage, v ge , (volts) collector-current, i c , (amperes) transfer characteristics (typical) v ge = 15v 0 5 2 43 1 t j = 25c t j = 125c t j = 25c t j = 125c QID4515004 dual igbt hvigbt module 150 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com preliminary 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
5 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 111.0 11.1 1.11 0.11 10 1 v ge = 0v t j = 25c f = 100 khz c ies c oes c res 0 11055 165 220 275 10 -1 gate charge, q g , ( c) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 5 10 15 0 -5 -10 -15 0.55 2.20 1.65 1.10 v ce = 2800v i c = 133a t j = 25c collector current, i c , (amperes) switching energies, e on , e off , e rec , (j/pulse) 1.76 0.22 0.44 0.66 0.88 1.10 1.32 1.54 0 v cc = 2800v v ge = 15v r g(on) = 24.3? r g(off) = 90? l s = 150nh t j = 125c inductive load half-bridge switching energy characteristics (typical) switching energies, e on , e rec , (j/pulse) 0 189 27 36 45 1.32 0.22 0.44 0.66 0.88 1.10 0 v cc = 2800v v ge = 15v i c = 133a l s = 150nh t j = 125c inductive load gate resistance, r g , (?) half-bridge switching energy characteristics (typical) e on e off e rec e on e rec QID4515004 dual igbt hvigbt module 150 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com preliminary 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
6 1.32 0.22 0.44 0.66 0.88 1.10 0 switching energies, e off ,, (j/pulse) 0 45 90 135 180 v cc = 2800v v ge = 15v i c = 133a l s = 150nh t j = 125c inductive load gate resistance, r g , (?) half-bridge switching energy characteristics (typical) e off free-wheel diode reverse recovery characteristics (typical) emitter current, i c , (amperes) reverse recovery time, t rr , (ns) 10 2 11.0 110 10 1 10 0 10 -1 1100.0 110.0 11.0 1.1 1110 i rr t rr collector current, i c , (amperes) 10 2 10 1 11.0 110 10 0 10 -1 10 -2 switching times, (ns) half-bridge switching time characteristics (typical) t d(off) t d(on) t r l s = 150nh t j = 125c inductive load v cc = 2800v v ge = 15v r g(on) = 24.3 r g(off) = 90 v cc = 2800v v ge = 15v r g(on) = 24.3 l s = 150 nh t j = 125c inductive load t f 1110 collector emitter voltage, v ces , (volts) 375 312 250 188 125 63 0 2000 1000 3000 0 collector current, i c , (amperes) reverse bias safe operating area (rbsoa) v cc 3200v v ge = 15v r g(off) = 90 t j = 125c 5000 4000 QID4515004 dual igbt hvigbt module 150 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com preliminary 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
7 time, (s) transient thermal impedance characteristics (igbt & fwdi) 1.2 1.0 10 -1 10 -2 10 -3 10 0 10 1 0.8 0.6 0.4 0.2 0 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.079k/w (igbt) r th(j-c) = 0.149k/w (fwdi) normalized transient thermal impedance, z th(j-c') 375 312 250 188 125 63 0 2000 1000 3000 0 5000 4000 1500 1250 1000 750 500 250 0 2000 1000 3000 0 5000 4000 collector emitter voltage, v ces , (volts) collector current, i c , (amperes) short circuit safe operating area (scsoa) v cc 3200v v ge = 15v r g(on) = 24.3 r g(off) = 90 t j = 125c emitter-collector voltage, v ec , (volts) reverse recovery current, i rr , (amperes) free-wheel diode reverse recovery safe operating area (rrsoa) v cc 3200v di/dt < 660a/s t j = 125c QID4515004 dual igbt hvigbt module 150 amperes/4500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com preliminary 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
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